Child codes

8542.32.11

Multi-component electronic integrated circuit (MCO) memories; For 2022, those specified in note 12 (b)(3,4) of the chapter, before those specified in note 9 (b)(3,4) of the chapter

 8542.32.19

Other electronic integrated circuit memories; For 2022, those specified in note 12 (b)(3,4) of the chapter, before those specified in note 9 (b)(3,4) of the chapter

 8542.32.31

Dynamic random access main memories (D-RAMs); memory capacity <= 512 Mbit

 8542.32.39

Dynamic random access main memories (D-RAMs); memory capacity > 512 Mbit

 8542.32.45

Static random access main memories (S-RAMs) (including random access caches (cache-RAMs))

 8542.32.55

UV-erasable, programmable, read-only memories (EPROMs)

 8542.32.61

Electrically erasable, programmable and read-only flash memories (E2PROMs); memory capacity: <= 512Mbit

 8542.32.69

Electrically erasable, programmable and read-only flash memories (E2PROMs); memory capacity: > 512 Mbit

 8542.32.75

Other electrically erasable, programmable and read-only memories (E2PROMs)

 8542.32.90

Other memories with electronic integrated circuits

How to use Subheading 8542.32 on TR2B

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